RFL1N12L Datasheet

IC型號(hào)：
RFL1N12L
PDF描述：
1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power M...
文件大?。?/label>
34.90KB
PDF頁(yè)數(shù)：
4頁(yè)
芯片廠(chǎng)家：
INTERSIL

閱覽下載糾錯(cuò) 0

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書(shū)

PDF預(yù)覽

Semiconductor

RFL1N12L,

RFL1N15L

1A, 120V and 150V, 1.900 Ohm,

Logic Level, N-Channel Power MOSFETs

Description

These are N-Channel enhancement mode silicon gate

power 鏗乪ld effect transistors speci鏗乧ally designed for use

with logic level (5V) driving sources in applications such as

programmable controllers, automotive switching, and sole-

noid drivers. This performance is accomplished through a

special gate oxide design which provides full rated conduc-

tion at gate biases in the 3V to 5V range, thereby facilitating

true on-off power control directly from logic circuit supply

voltages.

Formerly developmental type TA09528.

September 1998

Features

鈥?1A, 120V and 150V

鈥?r

DS(ON)

= 1.900鈩?/div>

[ /Title

(RFL1N

12L,

RFL1N1

5L)

/Subject

(1A,

120V

and

150V,

1.900

Ohm,

Logic

Level,

N-Chan-

nel

Power

MOS-

FETs)

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor,

Logic

Level,

N-Chan-

nel

Power

MOS-

FETs,

TO-

205AF)

Ordering Information

PART NUMBER

RFL1N12L

RFL1N15L

PACKAGE

TO-205AF

BRAND

RFL1N12L

RFL1N15L

NOTE: When ordering, use the entire part number.

Symbol

Packaging

JEDEC TO-205AF

DRAIN

(CASE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

漏

Harris Corporation 1998

File Number

1513.2

7-1

型號(hào)

版本

描述

廠(chǎng)商

下載
RFL1N08

英文版

1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs

RFL1N08
RFL1N08

英文版

1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs

INTERSIL [...

RFL1N08
RFL1N10

英文版

1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs

RFL1N10
RFL1N10

英文版

1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs

INTERSIL [...

RFL1N10
RFL1N12

英文版

1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs

RFL1N12
RFL1N12

英文版

1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs

INTERSIL [...

RFL1N12
RFL1N15

英文版

1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs

RFL1N15
RFL1N15

英文版

1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs

INTERSIL [...

RFL1N15
RFL1N18

英文版

1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

RFL1N18
RFL1N18

英文版

1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

INTERSIL [...

RFL1N18
RFL1N20

英文版

1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

RFL1N20
RFL1N20

英文版

1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

INTERSIL [...

RFL1N20
RFL1P08

英文版

1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs

RFL1P08
RFL1P08

英文版

1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs

INTERSIL [...

RFL1P08
RFL1P10

英文版

1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs

RFL1P10
RFL1P10

英文版

1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs

INTERSIL [...

RFL1P10
RFL1N08L

英文版

TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 1A I(D) | T...

ETC

RFL1N08L
RFL1N08L

英文版

TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 1A I(D) | T...

Thomson Consume...

RFL1N08L
RFL1N10L

英文版

1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET

RFL1N10L
RFL1N10L

英文版

1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET

INTERSIL [...

RFL1N10L

RFL1N12L Datasheet

PDF預(yù)覽

RFL1N12L相關(guān)型號(hào)PDF文件下載

您可能感興趣的PDF文件資料

熱門(mén)IC型號(hào)推薦

RFL1N12L Datasheet

PDF預(yù)覽

RFL1N12L相關(guān)型號(hào)PDF文件下載

您可能感興趣的PDF文件資料

熱門(mén)IC型號(hào)推薦

建議反饋

PDF糾錯(cuò)X