RFL1N08 Datasheet

IC型號：
RFL1N08
PDF描述：
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
文件大小：
34.45KB
PDF頁數(shù)：
4頁
芯片廠家：
INTERSIL

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Semiconductor

RFL1N08,

RFL1N10

1A, 80V and 100V, 1.200 Ohm,

N-Channel, Power MOSFETs

Description

These are N-channel enhancement mode silicon-gate power

鏗乪ld-effect transistors designed for applications such as

switching regulators, switching converters, motor drivers,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate-drive power.

These types can be operated directly from integrated cir-

cuits.

Formerly developmental type TA09282.

September 1998

Features

鈥?1A, 80V and 100V

鈥?r

DS(ON)

= 1.200鈩?/div>

[ /Title

(RFL1N

08,

RFL1N1

/Subject

(1A,

80V and

100V,

1.200

Ohm, N-

Chan-

nel,

Power

MOS-

FETs)

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Chan-

nel,

Power

MOS-

FETs,

TO-

204AA)

/Creator

()

/DOCIN

FO pdf-

Ordering Information

PART NUMBER

RFL1N08

RFL1N10

PACKAGE

TO-205AF

BRAND

RFL1N08

RFL1N10

NOTE: When ordering, use the entire part number.

Symbol

Packaging

JEDEC TO-204AA

DRAIN

(CASE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

漏

Harris Corporation 1998

File Number

1385.2

5-1

型號

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描述

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