RFK70N06
Data Sheet
September 1998
File Number
4331.1
70A, 60V, 0.014 Ohm, N-Channel Power
MOSFET
The RFK70N06 N-Channel power MOSFET is manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They are designed for use in applications such
as switching regulators, switching converters, motor drivers,
relay drivers and emitter switches for bipolar transistors.
These transistors can be operated directly from integrated
circuits.
Formerly developmental type TA49007.
Features
鈥?70A, 60V
鈥?r
DS(ON)
= 0.014鈩?/div>
鈥?Temperature Compensating PSPICE Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?175
o
C Operating Temperature
Symbol
D
Ordering Information
PART NUMBER
RFK70N06
PACKAGE
TO-204AE
BRAND
RFK70N06
S
G
NOTE: When ordering, use the entire part number.
Packaging
TO-204AE
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999
next