RFK25N18, RFK25N20
Data Sheet
October 1998
File Number 1500.3
25A, 180V and 200V, 0.150 Ohm,
N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate
power 鏗乪ld effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09594.
Features
鈥?25A, 180V and 200V
鈥?r
DS(ON)
= 0.150鈩?/div>
Symbol
D
G
Ordering Information
PART NUMBER
RFK25N18
RFK25N20
PACKAGE
TO-204AE
TO-204AE
BRAND
RFK25N18
RFK25N20
S
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AE
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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Copyright
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Intersil Corporation 1999
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