RFH12N35, RFH12N40
Data Sheet
October 1998
File Number 1630.2
12A, 350V and 400V, 0.380 Ohm,
N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate
power 鏗乪ld effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17434.
Features
鈥?12A, 350V and 400V
鈥?r
DS(ON)
= 0.380鈩?/div>
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
RFH12N35
RFH12N40
PACKAGE
TO-218AC
TO-218AC
BRAND
RFH12N35
RFH12N40
G
S
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-218AC
SOURCE
DRAIN
GATE
DRAIN
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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Intersil Corporation 1999
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