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RFG60P06E Datasheet

  • RFG60P06E

  • 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

  • 7頁

  • INTERSIL   INTERSIL

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RFG60P06E
Data Sheet
July 1999
File Number
3989.3
60A, 60V, 0.030 Ohm, ESD Rated,
P-Channel Power MOSFET
The RFG60P06E P-Channel power MOSFET is
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
The RFG60P06E incorporates ESD protection and is
designed to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type TA09836.
Features
鈥?60A, 60V
鈥?r
DS(ON)
= 0.030鈩?/div>
鈥?Temperature Compensating PSPICE
廬
Model
鈥?2kV ESD Rated
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?175
o
C Operating Temperature
鈥?Related Literature
Symbol
D
Ordering Information
PART NUMBER
RFG60P06E
PACKAGE
TO-247
BRAND
RFG60P06E
G
NOTE: When ordering use the entire part numberr RFG60P06E.
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(BOTTOM
SIDE METAL)
4-154
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE廬 is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999.

RFG60P06E 產(chǎn)品屬性

  • Fairchild Semiconductor

  • P-Channel

  • - 60 V

  • +/- 20 V

  • 60 A

  • 0.03 Ohms

  • Single

  • + 175 C

  • Through Hole

  • TO-247

  • 20 ns

  • - 55 C

  • 215 W

  • 60 ns

  • 65 ns

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