RFG60P05E Datasheet

IC型號(hào)：
RFG60P05E
PDF描述：
60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET
文件大?。?/label>
97.89KB
PDF頁數(shù)：
7頁
芯片廠家：
INTERSIL

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RFG60P05E

Data Sheet

July 1999

File Number

2745.6

60A, 50V, 0.030 Ohm, ESD Rated,

P-Channel Power MOSFET

This is a P-Channel power MOSFET manufactured using the

MegaFET process. This process, which uses feature sizes

approaching those of LSI circuits, gives optimum utilization

of silicon, resulting in outstanding performance. It was

designed for use in applications such as switching

regulators, switching converters, motor drivers, and relay

drivers. This type can be operated directly from integrated

circuits.

Formerly developmental type TA09835.

Features

鈥?60A, 50V

鈥?r

DS(ON)

= 0.030鈩?/div>

鈥?Temperature Compensating PSPICE

廬

Model

鈥?2kV ESD Rated

鈥?Peak Current vs Pulse Width Curve

鈥?UIS Rating Curve

鈥?175

C Operating Temperature

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Ordering Information

PART NUMBER

RFG60P05E

NOTE:

PACKAGE

TO-247

BRAND

RFG60P05E

Symbol

When ordering, use the entire part number.

Packaging

JEDEC STYLE TO-247

SOURCE

DRAIN

GATE

DRAIN

(BOTTOM

SIDE METAL)

4-147

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE廬 is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999

標(biāo)準(zhǔn)包裝
30
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET P 通道，金屬氧化物
FET 特點(diǎn)
標(biāo)準(zhǔn)型
漏極至源極電壓(Vdss)
50V
電流 - 連續(xù)漏極(Id) @ 25° C
60A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
30 毫歐 @ 60A，10V
Id 時(shí)的 Vgs(th)（最大）
4V @ 250µA
閘電荷(Qg) @ Vgs
450nC @ 20V
輸入電容 (Ciss) @ Vds
7200pF @ 25V
功率 - 最大
215W
安裝類型
通孔
封裝/外殼
TO-247-3
供應(yīng)商設(shè)備封裝
TO-247
包裝
管件

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