RFD4N06L, RFD4N06LSM
Data Sheet
June 1999
File Number
2837.1
4A, 60V, 0.600 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFD4N06L, RFD4N06LSM are N-Channel enhancement
mode silicon gate power field effect transistors specifically
designed for use with logic level (5 volt) driving sources in
applications such as programmable controllers, automotive
switching, and solenoid drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conduction at gate biases in the 3-5 volt
range, thereby facilitating true on-off power control from logic
circuit supply voltages.
Formerly developmental type TA09520.
Features
鈥?4A, 60V
鈥?r
DS(ON)
= 0.600鈩?/div>
鈥?Design Optimized for 5 Volt Gate Drive
鈥?Can be Driven Directly From Q-MOS, N-MOS,
or TTL Circuits
鈥?SOA is Power Dissipation Limited
鈥?175
o
C Rated Junction Temperature
鈥?Logic Level Gate
鈥?High Input Impedance
鈥?Related Literature
Ordering Information
PART NUMBER
RFD4N06L
RFD4N06LSM
PACKAGE
TO-251AA
TO-252AA
BRAND
RFD4N06L
RFD4N06LSM
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
GATE
SOURCE
JEDEC TO-252AA
DRAIN
(FLANGE)
DRAIN
(FLANGE)
6-189
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
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Intersil Corporation 1999
INTERSIL
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