RFD3055LESM Datasheet

IC型號：
RFD3055LESM
PDF描述：
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
文件大?。?/label>
416.59KB
PDF頁數(shù)：
8頁
芯片廠家：
FAIRCHILD

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RFD3055LE, RFD3055LESM, RFP3055LE

Data Sheet

January 2002

11A, 60V, 0.107 Ohm, Logic Level,

N-Channel Power MOSFETs

These N-Channel enhancement-mode power MOSFETs are

manufactured using the latest manufacturing process

technology. This process, which uses feature sizes

approaching those of LSI circuits, gives optimum utilization

of silicon, resulting in outstanding performance. They were

designed for use in applications such as switching

regulators, switching converters, motor drivers and relay

drivers. These transistors can be operated directly from

integrated circuits.

Formerly developmental type TA49158.

Features

鈥?11A, 60V

鈥?r

DS(ON)

= 0.107

鈩?/div>

鈥?Temperature Compensating PSPICE

廬

Model

鈥?Peak Current vs Pulse Width Curve

鈥?UIS Rating Curve

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Symbol

Ordering Information

PART NUMBER

RFD3055LE

RFD3055LESM

RFP3055LE

PACKAGE

TO-251AA

TO-252AA

TO-220AB

BRAND

F3055L

FP3055LE

NOTE: When ordering, use the entire part number. Add the suf鏗亁, 9A,

to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A.

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

JEDEC TO-251AA

SOURCE

DRAIN

GATE

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

漏2002 Fairchild Semiconductor Corporation

RFD3055LE, RFD3055LESM, RFP3055LE Rev. B

標(biāo)準(zhǔn)包裝
75
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
60V
電流 - 連續(xù)漏極(Id) @ 25° C
11A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
107 毫歐 @ 8A，5V
Id 時的 Vgs(th)（最大）
3V @ 250µA
閘電荷(Qg) @ Vgs
11.3nC @ 10V
輸入電容 (Ciss) @ Vds
350pF @ 25V
功率 - 最大
38W
安裝類型
表面貼裝
封裝/外殼
TO-252-3，DPak（2 引線+接片），SC-63
供應(yīng)商設(shè)備封裝
TO-252AA
包裝
管件

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