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RFD16N05LSM Datasheet

  • RFD16N05LSM

  • 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

  • 51.57KB

  • 6頁(yè)

  • INTERSIL   INTERSIL

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RFD16N05L, RFD16N05LSM
Data Sheet
April 1999
File Number
2269.2
16A, 50V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel logic level power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor relay
drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.
Formerly developmental type TA09871.
Features
鈥?16A, 50V
鈥?r
DS(ON)
= 0.047鈩?/div>
鈥?UIS SOA Rating Curve (Single Pulse)
鈥?Design Optimized for 5V Gate Drives
鈥?Can be Driven Directly from CMOS, NMOS, TTL Circuits
鈥?Compatible with Automotive Drive Requirements
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Majority Carrier Device
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
RFD16N05L
RFD16N05LSM
PACKAGE
TO-251AA
TO-252AA
BRAND
RFD16N05L
RFD16N05LSM
Symbol
D
NOTE: When ordering, include the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e. RFD16N05LSM9A
G
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
GATE
SOURCE
JEDEC TO-252AA
DRAIN (FLANGE)
6-163
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

RFD16N05LSM 產(chǎn)品屬性

  • High Voltage Switches for Power ProcessingSMPS Power Switch

  • 75

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 50V

  • 16A

  • 47 毫歐 @ 16A，5V

  • 2V @ 250mA

  • 80nC @ 10V

  • -

  • 60W

  • 表面貼裝

  • TO-252-3，DPak（2 引線+接片），SC-63

  • TO-252AA

  • 管件

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