RFD16N05LSM Datasheet

IC型號：
RFD16N05LSM
PDF描述：
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
文件大?。?/label>
51.57KB
PDF頁數(shù)：
6頁
芯片廠家：
INTERSIL

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RFD16N05L, RFD16N05LSM

Data Sheet

April 1999

File Number

2269.2

16A, 50V, 0.047 Ohm, Logic Level,

N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs

manufactured using the MegaFET process. This process,

which uses feature sizes approaching those of LSI

integrated circuits gives optimum utilization of silicon,

resulting in outstanding performance. They were designed

for use with logic level (5V) driving sources in applications

such as programmable controllers, automotive switching,

switching regulators, switching converters, motor relay

drivers and emitter switches for bipolar transistors. This

performance is accomplished through a special gate oxide

design which provides full rated conductance at gate biases

in the 3V to 5V range, thereby facilitating true on-off power

control directly from logic circuit supply voltages.

Formerly developmental type TA09871.

Features

鈥?16A, 50V

鈥?r

DS(ON)

= 0.047鈩?/div>

鈥?UIS SOA Rating Curve (Single Pulse)

鈥?Design Optimized for 5V Gate Drives

鈥?Can be Driven Directly from CMOS, NMOS, TTL Circuits

鈥?Compatible with Automotive Drive Requirements

鈥?SOA is Power Dissipation Limited

鈥?Nanosecond Switching Speeds

鈥?Linear Transfer Characteristics

鈥?High Input Impedance

鈥?Majority Carrier Device

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Ordering Information

PART NUMBER

RFD16N05L

RFD16N05LSM

PACKAGE

TO-251AA

TO-252AA

BRAND

RFD16N05L

RFD16N05LSM

Symbol

NOTE: When ordering, include the entire part number. Add the suffix 9A

to obtain the TO-252AA variant in tape and reel, i.e. RFD16N05LSM9A

Packaging

JEDEC TO-251AA

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

GATE

SOURCE

JEDEC TO-252AA

DRAIN (FLANGE)

6-163

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999

產(chǎn)品培訓模塊
High Voltage Switches for Power ProcessingSMPS Power Switch
標準包裝
75
類別
分離式半導體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
50V
電流 - 連續(xù)漏極(Id) @ 25° C
16A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
47 毫歐 @ 16A，5V
Id 時的 Vgs(th)（最大）
2V @ 250mA
閘電荷(Qg) @ Vgs
80nC @ 10V
輸入電容 (Ciss) @ Vds
-
功率 - 最大
60W
安裝類型
表面貼裝
封裝/外殼
TO-252-3，DPak（2 引線+接片），SC-63
供應商設備封裝
TO-252AA
包裝
管件

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