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RFD16N03LSM Datasheet

  • RFD16N03LSM

  • 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs

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RFD16N03L, RFD16N03LSM
Data Sheet
April 1999
File Number
4013.2
16A, 30V, 0.025 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers and
relay drivers. This performance is accomplished through a
special gate oxide design which provides full rated
conductance at gate bias in the 3V to 5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Formerly developmental type TA49030.
Features
鈥?16A, 30V
鈥?r
DS(ON)
= 0.025鈩?/div>
鈥?Temperature Compensating PSPICE鈩?Model
鈥?Can be Driven Directly from CMOS, NMOS,
and TTL Circuits
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?175
o
C Operating Temperature
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering InformationS
PART NUMBER
RFD16N03L
RFD16N03LSM
PACKAGE
TO-251AA
TO-252AA
BRAND
16N03L
16N03L
Symbol
DRAIN
NOTE: When ordering, use the entire part number. Add the suffix 9A,
to obtain the TO-252AA variant in tape and reel, e.g. RFD16N03LSM9A.
GATE
SOURCE
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
GATE
SOURCE
JEDEC TO-252AA
DRAIN
(FLANGE)
DRAIN
(FLANGE)
6-156
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE鈩?is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

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