RFD16N03LSM Datasheet

IC型號(hào)：
RFD16N03LSM
PDF描述：
16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs
文件大?。?/label>
110.80KB
PDF頁(yè)數(shù)：
8頁(yè)
芯片廠家：
INTERSIL

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RFD16N03L, RFD16N03LSM

Data Sheet

April 1999

File Number

4013.2

16A, 30V, 0.025 Ohm, Logic Level,

N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI circuits, gives optimum

utilization of silicon, resulting in outstanding performance.

They were designed for use in applications such as

switching regulators, switching converters, motor drivers and

relay drivers. This performance is accomplished through a

special gate oxide design which provides full rated

conductance at gate bias in the 3V to 5V range, thereby

facilitating true on-off power control directly from logic level

(5V) integrated circuits.

Formerly developmental type TA49030.

Features

鈥?16A, 30V

鈥?r

DS(ON)

= 0.025鈩?/div>

鈥?Temperature Compensating PSPICE鈩?Model

鈥?Can be Driven Directly from CMOS, NMOS,

and TTL Circuits

鈥?Peak Current vs Pulse Width Curve

鈥?UIS Rating Curve

鈥?175

C Operating Temperature

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Ordering InformationS

PART NUMBER

RFD16N03L

RFD16N03LSM

PACKAGE

TO-251AA

TO-252AA

BRAND

16N03L

Symbol

DRAIN

NOTE: When ordering, use the entire part number. Add the suffix 9A,

to obtain the TO-252AA variant in tape and reel, e.g. RFD16N03LSM9A.

GATE

SOURCE

Packaging

JEDEC TO-251AA

SOURCE

DRAIN

GATE

SOURCE

JEDEC TO-252AA

DRAIN

(FLANGE)

DRAIN

(FLANGE)

6-156

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE鈩?is a trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999

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