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RFD16N02 Datasheet

  • RFD16N02

  • 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET

  • 8頁

  • INTERSIL   INTERSIL

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RFD16N02L,
RFD16N02LSM
May 1997
16A, 20V, 0.022 Ohm, N-Channel,
Logic Level, Power MOSFET
Description
The RFD16N02L and RFD16N02LSM are N-Channel power
MOSFETs manufactured using the MegaFET process. This
process, which uses feature sizes approaching those of
LSI circuits, gives optimum utilization of silicon, resulting in
outstanding performance. They were designed for use in
applications such as switching regulators, switching convert-
ers, motor drivers and relay drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate bias in the 3V to 5V
range, thereby facilitating true on-off power control directly
from logic level (5V) integrated circuits.
Features
鈥?16A, 20V
鈥?r
DS(ON)
= 0.022鈩?/div>
鈥?/div>
Temperature Compensating
PSPICE Model
鈥?Can be Driven Directly from CMOS, NMOS,
and TTL Circuits
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?175
o
C Operating Temperature
Ordering Information
PART NUMBER
RFD16N02L
RFD16N02LSM
PACKAGE
TO-251AA
TO-252AA
BRAND
16N02L
16N02L
Symbol
D
NOTE: When ordering, use the entire part number. Add the suf鏗亁
9A, to obtain the TO-252AA variant in tape and reel, e.g.
RFD16N02LSM9A.
G
Formerly developmental type TA49243.
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
JEDEC TO-252AA
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999
File Number
4341
1

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