RFD15N06LE, RFD15N06LESM
Data Sheet
April 1999
File Number
4079.1
15A, 60V, 0.065 Ohm, ESD Rated, Logic
Level, N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Formerly developmental type TA49165.
Features
鈥?15A, 60V
鈥?r
DS(ON)
= 0.065鈩?/div>
鈥?2kV ESD Protected
鈥?Temperature Compensating PSPICE鈩?Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?175
o
C Operating Temperature
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
RFD15N06LE
RFD15N06LESM
PACKAGE
TO-251AA
TO-252AA
BRAND
F15N6L
F15N6L
Symbol
D
NOTE: When ordering, use the entire part number. For ordering in tape
and reel, add the suffix 9A to the part number, i.e. RFD15N06LESM9A.
G
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
GATE
SOURCE
JEDEC TO-252AA
DRAIN (FLANGE)
6-149
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE鈩?is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999
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