RFD14N05LSM Datasheet

IC型號：
RFD14N05LSM
PDF描述：
14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs
文件大?。?/label>
78.04KB
PDF頁數(shù)：
8頁
芯片廠家：
INTERSIL

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上傳產(chǎn)品規(guī)格書

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RFD14N05L, RFD14N05LSM, RFP14N05L

Data Sheet

April 1999

File Number

2246.3

14A, 50V, 0.100 Ohm, Logic Level,

N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits, gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers and relay drivers. This performance is accomplished

through a special gate oxide design which provides full rated

conductance at gate bias in the 3V-5V range, thereby

facilitating true on-off power control directly from logic level

(5V) integrated circuits.

Formerly developmental type TA09870.

Features

鈥?14A, 50V

鈥?r

DS(ON)

= 0.100鈩?/div>

鈥?Temperature Compensating PSPICE鈩?Model

鈥?Can be Driven Directly from CMOS, NMOS, and

TTL Circuits

鈥?Peak Current vs Pulse Width Curve

鈥?UIS Rating Curve

鈥?175

C Operating Temperature

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Ordering Information

PART NUMBER

RFD14N05L

RFD14N05LSM

RFP14N05L

PACKAGE

TO-251AA

TO-252AA

TO-220AB

BRAND

14N05L

FP14N05L

Symbol

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05LSM9A.

Packaging

JEDEC TO-251AA

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

GATE

SOURCE

JEDEC TO-252AA

DRAIN (FLANGE)

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

6-135

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE鈩?is a trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power ProcessingSMPS Power Switch
標(biāo)準(zhǔn)包裝
75
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
50V
電流 - 連續(xù)漏極(Id) @ 25° C
14A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
100 毫歐 @ 14A，5V
Id 時的 Vgs(th)（最大）
2V @ 250µA
閘電荷(Qg) @ Vgs
40nC @ 10V
輸入電容 (Ciss) @ Vds
670pF @ 25V
功率 - 最大
48W
安裝類型
表面貼裝
封裝/外殼
TO-252-3，DPak（2 引線+接片），SC-63
供應(yīng)商設(shè)備封裝
TO-252AA
包裝
管件

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