= 0.240鈩?/div>
(HUF75
power field effect transistors. They are advanced power
鈥?Single Pulse Avalanche Energy Rated
337G3,
MOSFETs designed, tested, and guaranteed to withstand a
鈥?SOA is Power Dissipation Limited
HUF753
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
37P3,
鈥?Nanosecond Switching Speeds
applications such as switching regulators, switching
HUF753
convertors, motor drivers, relay drivers, and drivers for high
鈥?Linear Transfer Characteristics
37S3,
power bipolar switching transistors requiring high speed and
鈥?High Input Impedance
HUF753
low gate drive power. These types can be operated directly
鈥?Related Literature
37S3S)
from integrated circuits.
- TB334 鈥淕uidelines for Soldering Surface Mount Compo-
/Subject
Formerly developmental type TA17465.
nents to PC Boards鈥?/div>
(62A,
Ordering Information
55V,
Symbol
0.014
PART NUMBER
PACKAGE
BRAND
D
Ohm, N-
RF4E20N50S
TO-268AA
RF4E20N50S
Channel
NOTE: When ordering, use the entire part number.
UltraFE
G
T Power
S
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Packaging
Semi-
JEDEC TO-268AA
conduc-
tor, N-
DRAIN
Channel
(TAB)
UltraFE
T Power
GATE
MOS-
SOURCE
FETs,
TO-247,
TO-
220AB,
TO-
262AA,
TO-
263AB)
漏2002 Fairchild Semiconductor Corporation
RF4E20N50S revA1
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