RF3V49092, RF3S49092SM
Data Sheet
November 1999
File Number 4600.1
20A/10A, 12V, 0.060/0.140 Ohm, Logic
Level, Complementary Power MOSFET
These complementary power MOSFETs are manufactured
using an advanced MegaFET process. This process, which
uses feature sizes approaching those of LSI integrated
circuits, gives optimum utilization of silicon, resulting in
outstanding performance. It is designed for use in
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. This product achieves full rated conduction at a
gate bias in the 3V to 5V range, thereby facilitating true
on-off power control directly from logic level (5V) integrated
circuits.
Formerly developmental type TA49092.
Features
鈥?20A, 12V (N-Channel)
10A, 12V (P-Channel)
鈥?r
DS(ON)
= 0.060鈩?(N-Channel)
r
DS(ON)
= 0.140鈩?(P-Channel)
鈥?Temperature Compensating PSPICE
廬
Model
鈥?On-Resistance vs Gate Drive Voltage Curves
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
Symbol
S2
Ordering Information
PART NUMBER
RF3V49092
RF3S49092SM
PACKAGE
TS-001AA
MO-169AB
BRAND
F3V49092
F3S49092
G2
D1
NOTE: When ordering, use the entire part number. For ordering the
MO-169AB in tape and reel, add the suf鏗亁 9A to the part number, i.e.,
RF3S49092SM9A.
G1
S1
Packaging
JEDEC TS-001AA (ALTERNATE)
S1
G1
D S2
G2
G2
S2
JEDEC MO-169AB
D G1
S1
4-30
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE廬 is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 321-727-9207
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Copyright
漏
Intersil Corporation 1999