Proposed
RF3931
GaN WIDE-BAND POWER AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: Flanged Ceramic
Features
Peak Power=30W
Gain=14dB
Advanced GaN HEMT Tech-
nology
48V Operation
Optimized Evaluation Board
Layout for 50惟 Operation
RF IN
VGQ
Pin 1 (CUT)
GND
BASE
RF OUT
VDQ
Pin 2
Applications
Commercial Wireless Infra-
structure
Cellular and WiMAX Infra-
structure
General Purpose Broadband
Amplifiers
Public Mobile Radios
Industrial, Scientific and Med-
ical
Functional Block Diagram
Product Description
The RF3931 is designed for commercial infrastructure, cellular and
WiMAX infrastructure and general purpose broadband amplifier applica-
tions. Using an advanced high power density Gallium Nitride (GaN) semi-
conductor process, these high-performance amplifiers achieve high
efficiency and flat gain over a broad frequency range in a single amplifier
design. The RF3931 is an unmatched GaN transistor packaged in a
flanged ceramic package which provides excellent thermal stability
through the use of advanced heat sink and power dissipation technolo-
gies. Ease of integration is accomplished through the incorporation of sim-
ple, optimized matching networks external to the package that provide
wideband gain and power performance in a single amplifier.
Ordering Information
RF3931
GaN Wide-Band Power Amplifier
Optimum Technology Matching廬 Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES廬, RFMD廬, Optimum Technology Matching廬, Enabling Wireless Connectivity鈩? PowerStar廬, POLARIS鈩?TOTAL RADIO鈩?and UltimateBlue鈩?are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 漏2006, RF Micro Devices, Inc.
Prelim DSB070829
7628 Thorndike Road, Greensboro, NC 27409-9421 路 For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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