Proposed
0
Typical Applications
鈥?Cellular Basestation Amplifiers and
Transceivers
鈥?Gain Stage or Driver Amplifiers for Linear and
Saturated Amplifiers
RF3816
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 6GHz
鈥?Narrow and Broadband Commercial and
Military Radio Designs
E
S
Features
RF3816
The RF3816 is a high-performance InGaP/GaAs general
purpose RF and microwave gain block amplifier. This
50鈩?amplifier is based on a reliable HBT MMIC design,
providing unsurpassed performance for many small-sig-
nal applications. Designed with an external bias resistor,
the RF3816 provides high output power and high gain
over broad frequency range. This low-cost amplifier is
packaged in a thermally efficient, industry standard,
ceramic Micro-X package providing excellent Theta
JC
performance.
D
W
Optimum Technology Matching廬 Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
GaAs HBT
SiGe HBT
GaN HEMT
Si CMOS
N
E
Package Style: Micro-X, 4-Pin, Ceramic
GaAs MESFET
SiGe Bi-CMOS
R
鈥?Reliable, Low-Cost HBT Design
鈥?12.1dB Gain, +17.3dBm P1dB@1.0GHz
鈥?High P1dB of +14.7dBm@6.0GHz
鈥?Single 6V Power Supply Operation
鈥?50鈩?I/O Matched
鈥?Thermally-Efficient Package
3 RF OUT
N
O
T
RF IN 1
FO
GND
4
MARKING - R1
Ordering Information
2
GND
Cascadable Broadband GaAs MMIC Amplifier DC to
6GHz (Bulk: 25 piece increment)
RF3816SB
5-piece Sample Bag
RF3816SR
100-piece Reel
RF3816TR7
7鈥?Reel (1,000 pieces)
RF3816PCBA-410 Evaluation Board
RF Micro Devices, Inc.
Tel (336) 664 1233
7628 Thorndike Road
Fax (336) 664 0454
Greensboro, NC 27409, USA
http://www.rfmd.com
NOT FOR NEW DESIGNS
Functional Block Diagram
Rev A2 041013
IG
N
S
0.200 sq.
Typ
R1
Product Description
45擄
+ 1擄
0.055
+ 0.005
0.070
sq.
0.020
+ 0.002
0.040
+ 0.002
NOTES:
1. Shaded lead is pin 1.
2. Darkened areas are metallization.
4-1
1
2
