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RF3808S Datasheet

  • RF3808S

  • Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)

  • 11頁(yè)

  • IRF

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PD - 94338A
AUTOMOTIVE MOSFET
Typical Applications
q
q
IRF3808S
IRF3808L
HEXFET
廬
Power MOSFET
D
Integrated Starter Alternator
42 Volts Automotive Electrical Systems
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Benefits
q
q
q
q
q
q
V
DSS
= 75V
G
S
R
DS(on)
= 0.007鈩?/div>
I
D
= 106AV
Description
Designed specifically for Automotive applications, this Advanced
Planar Stripe HEXFET 廬 Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-resistance per
silicon area. Additional features of this HEXFET power MOSFET
are a 175擄C junction operating temperature, low R胃JC, fast switch-
ing speed and improved repetitive avalanche rating. This combina-
tion makes the design an extremely efficient and reliable choice for
use in higher power Automotive electronic systems and a wide
variety of other applications.
D
2
Pak
IRF3808S
TO-262
IRF3808L
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt
S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
106V
75V
550
200
1.3
鹵 20
430
82
See Fig.12a, 12b, 15, 16
5.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient
(PCB Mounted, Steady State)**
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
0.75
40
Units
擄C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
03/08/02

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