IRF340
Data Sheet
March 1999
File Number
2307.3
10A, 400V, 0.550 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power 鏗乪ld
effect transistor is designed, tested and guaranteed to
withstand a speci鏗乧 level of energy in the breakdown
avalanche mode of operation. These MOSFETs are
designed for applications such as switching regulators,
switching converters, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
Formerly developmental type TA17424.
Features
鈥?10A, 400V
鈥?r
DS(ON)
= 0.550鈩?/div>
鈥?Single Pulse Avalanche Energy Rated
鈥?SOA is Power-Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Majority Carrier Device
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
IRF340
PACKAGE
TO-204AE
BRAND
IRF340
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
Packaging
JEDEC TO-204AE
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
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Intersil Corporation 1999
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