RF3315Broad-
band High Lin-
earity Amplifier
RF3315
BROADBAND HIGH LINEARITY AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: SOT89
Features
300MHz to 3GHz
+40dBm Output IP3
12.5dB Gain at 2.0GHz
+23dBm P1dB
3.0dB Typical Noise Figure at
2.0GHz
Single 5V Power Supply
1
RF IN
GND
4
2
GND
3
RF OUT
Applications
Basestation Applications
Cellular and PCS Systems
WLL, W-CDMA Systems
Final PA for Low-Power Applica-
tions
Functional Block Diagram
Product Description
The RF3315 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT) ampli-
fier packaged in a low-cost surface-mount package. This amplifier is ideal for use in
applications requiring high-linearity and low noise figure over the 300MHz to 3GHz
frequency range. The RF3315 operates from a single 5V power supply.
Ordering Information
RF3315
RF3315PCBA-410
RF3315PCBA-411
Broadband High Linearity Amplifier
Fully Assembled Evaluation Board (2GHz)
Fully Assembled Evaluation Board (900MHz)
Optimum Technology Matching廬 Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES廬, RFMD廬, Optimum Technology Matching廬, Enabling Wireless Connectivity鈩? PowerStar廬, POLARIS鈩?TOTAL RADIO鈩?and UltimateBlue鈩?are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 漏2006, RF Micro Devices, Inc.
Rev A10 DS050318
7628 Thorndike Road, Greensboro, NC 27409-9421 路 For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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