RF3300-3
0
Typical Applications
鈥?3V CDMA US-PCS Handsets
鈥?3V CDMA2000/1X PCS Handsets
鈥?Spread-Spectrum Systems
Product Description
The RF3300-3 is a high-power, high-efficiency linear
amplifier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA handheld digital cellular equipment, spread-
spectrum systems, and other applications in the
1850MHz to 1910MHz band. The RF3300-3 has a digital
control line for low power application to reduce the cur-
rent drain. The device is self-contained with 50鈩?input
and output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. This amplifier con-
tains a temperature compensating bias circuit for
improved performance over temperature.
7.375 TYP
6.775
6.575 TYP
5.875 TYP
3V 1900MHz LINEAR AMPLIFIER MODULE
鈥?Designed for Compatibility with Qualcomm
Chipsets
1.625
2.425
3.575
4.375
1
5.075 TYP
4.375 TYP
NOTES:
Nominal thickness, 1.55
mm.
Note orientation of Pin 1.
3.575 TYP
2.875 TYP
2.075 TYP
0.925 TYP
0.125 TYP
0.000
0.125 TYP
0.925 TYP
5.075 TYP
5.875 TYP
0.000
1.750
4.250
Dimensions in mm.
Bottom View
Optimum Technology Matching廬 Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Package Style: Module (6mmx7.5mm)
Features
鈥?Single 3V Supply with Internal V
REF
鈥?Integrated Power Detector
鈥?25dB Linear Gain
鈥?40mA Idle Current (Low Power Mode)
VMODE
PA_ON
VCC3 1
12
11
Pwr
Det
10 PDET_OUT
鈥?Temperature Compensating Bias Circuit
鈥?Integrated PA Enable Switch
GND 2
Bias
9 VCC2
GND 3
8 RF OUT
Ordering Information
RF IN 4
7 GND
RF3300-3
3V 1900MHz Linear Amplifier Module
RF3300-3 PCBA Fully Assembled Evaluation Board
VCC1 5
6 GND
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A5 030612
2-547
1
2
3
4
5
6
