RF3220High
Linear-
ity/Driver
Amplifier
RF3220
HIGH LINEARITY/DRIVER AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: QFN, 12-Pin, 3 x 3
GND
500MHz to 2GHz
+40.8dBm Output IP3
+14.2dB Gain at 1850MHz
+12.4dBm Input P1dB at
1850MHz
2.8dB Noise Figure at 1850MHz
Single 5V Power Supply
GND 1
RF IN 2
GND 3
12
11
GND
10
9 GND
8 RF OUT
7 GND
6
GND
Features
4
GND
Basestation Applications
Cellular and PCS Systems
CDMA, W-CDMA Systems
GSM/EDGE Systems
Final PA for Low-Power Applica-
tions
Functional Block Diagram
Product Description
The RF3220 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT)
amplifier packaged in a low-cost surface-mount package. This amplifier is ideal for
use in applications requiring high-linearity and low noise figure over the 500MHz to
3GHz frequency range. The RF3220 operates from a single 5V power supply, and is
assembled in an economical 3mmx3mm QFN package.
Ordering Information
RF3220
RF3220PCBA-41X
High Linearity/Driver Amplifier
Fully Assembled Evaluation Board
Optimum Technology Matching廬 Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES廬, RFMD廬, Optimum Technology Matching廬, Enabling Wireless Connectivity鈩? PowerStar廬, POLARIS鈩?TOTAL RADIO鈩?and UltimateBlue鈩?are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 漏2006, RF Micro Devices, Inc.
Rev A1 DS050822
7628 Thorndike Road, Greensboro, NC 27409-9421 路 For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
GND
Applications
BIAS
5
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