Preliminary
RF2175
3V 400MHZ LINEAR AMPLIFIER
2
Typical Applications
鈥?3V TETRA Cellular Handsets
鈥?3V CDMA Cellular Handsets
鈥?Portable Battery-Powered Equipment
2
POWER AMPLIFIERS
EXPOSED HEATSINK
Product Description
The RF2175 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in TETRA
hand-held digital cellular equipment, spread-spectrum
systems, and other applications in the 380MHz to
512MHz band. The RF2175 has an analog bias control
voltage to maximize efficiency. The device is self-con-
tained with 50鈩?input, and the output can be easily
matched to obtain optimum power, efficiency, and linear-
ity characteristics. The package is a small SSOP-16 plas-
tic with backside ground.
-A-
0.154
0.012
0.008
0.004
0.002 Note 3
Exposed Heat
Sink
0.196
0.189
0.025
0.123
0.107
0.237
0.063
0.057
0.087
0.071
8擄 MAX
0擄 MIN
NOTES:
1. Shaded lead in Pin 1.
2. Lead coplanarity - 0.003 with respect to datum "A".
3. Lead standoff is specified from the lowest point on the
package underside.
0.035
0.016
0.010
0.007
Optimum Technology Matching廬 Applied
Si BJT
Si Bi-CMOS
眉
GaAs HBT
SiGe HBT
Package Style: SSOP-16 Slug
GaAs MESFET
Si CMOS
Features
鈥?Single 3V Supply
鈥?31.8dBm Linear Output Power
鈥?37.5dB Linear Gain
鈥?30% Linear Efficiency
鈥?On-Board Power Down Mode
鈥?380MHz to 512MHz Operation
VCC
LTUNE
NC
Q1C
GND1
RF IN
1
2
3
4
5
6
7
Bias
16
15
14
13
12
11
10
9
VBIAS
RF OUT
RF OUT
RF OUT
Ordering Information
RF2175
RF2175 PCBA
3V 400MHz Linear Amplifier
Fully Assembled Evaluation Board
VREG
8
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A6 010718
2-243
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