RF21633 V,
2.5GHz Lin-
ear Power
Amplifier
RF2163
3V, 2.5GHz LINEAR POWER AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: QFN, 16-Pin, 4 x 4
VCC1
VCC1
14
GND
VCC
Features
Single 3.3V Power Supply
+30dBm Saturated Output
Power
19dB Small Signal Gain
High Power Added Efficiency
Patent Pending Power Sense
Technology
1800MHz to 2500MHz Fre-
quency Range
PWR SEN
RF IN
BIAS GND2
1
2
3
4
5
PWR REF
16
15
NC
13
12
11
RF OUT
RF OUT
RF OUT
10
9
GND
Bias
6
VREG1
7
VREG2
8
BIAS GND 1
Applications
2.5GHz ISM Band Applications
PCS Communication Systems
Wireless LAN Systems
Commercial and Consumer Sys-
tems
Portable Battery Powered Equip-
ment
Broadband Spread-Spectrum
Systems
Functional Block Diagram
Product Description
The RF2163 is a linear, medium power, high efficiency amplifier IC designed specif-
ically for low voltage operation. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 2.5GHz spread-spectrum transmitters.
The device is provided in a 16-pin leadless chip carrier with a backside ground and
is self-contained with the exception of the output matching network and power sup-
ply feed line.
Ordering Information
RF2163
RF2163 PCBA
3V, 2.5GHz Linear Power Amplifier
Fully Assembled Evaluation Board
Optimum Technology Matching廬 Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES廬, RFMD廬, Optimum Technology Matching廬, Enabling Wireless Connectivity鈩? PowerStar廬, POLARIS鈩?TOTAL RADIO鈩?and UltimateBlue鈩?are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 漏2006, RF Micro Devices, Inc.
Rev A6 DS060301
7628 Thorndike Road, Greensboro, NC 27409-9421 路 For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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