RF2163
0
Typical Applications
鈥?2.5GHz ISM Band Applications
鈥?PCS Communication Systems
鈥?Wireless LAN Systems
Product Description
The RF2163 is a linear, medium power, high efficiency
amplifier IC designed specifically for low voltage opera-
tion. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as the final RF
amplifier in 2.5GHz spread-spectrum transmitters. The
device is provided in a 16-pin leadless chip carrier with a
backside ground and is self-contained with the exception
of the output matching network and power supply feed
line.
0.10 C B
-B-
3V, 2.5GHz LINEAR POWER AMPLIFIER
RoHS Compliant & Pb-Free Product
鈥?Commercial and Consumer Systems
鈥?Portable Battery Powered Equipment
鈥?Broadband Spread-Spectrum Systems
4.00
0.10 C B
2 PLCS
3.75
2 PLCS
2.00
0.80
TYP
2
A
1.60
2 PLCS
3.75
0.75
0.50
INDEX AREA
1.50
SQ.
4.00
0.10 C A
2 PLCS
0.45
0.28
3.20
2 PLCS
2.00
0.10 C A
2 PLCS
0.10 M C A B
12擄
MAX
0.05
0.00
1.00
0.90
Dimensions in mm.
C
0.05
Shaded pin is lead 1.
0.75
0.65
Optimum Technology Matching廬 Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Package Style: QFN, 16-Pin, 4x4
Features
鈥?Single 3.3V Power Supply
鈥?+30dBm Saturated Output Power
VCC1
VCC1
GND
VCC
NC
鈥?19dB Small Signal Gain
鈥?High Power Added Efficiency
RF OUT
RF OUT
RF OUT
1
RF IN
BIAS GND2
PWR SEN
2
3
4
5
PWR REF
16
15
14
13
12
11
鈥?Patent Pending Power Sense Technology
鈥?1800MHz to 2500MHz Frequency Range
Bias
10
8
BIAS GND 1
9
GND
6
VREG1
7
VREG2
Ordering Information
RF2163
RF2163 PCBA
3V, 2.5GHz Linear Power Amplifier
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A6 060301
2-237