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RF2155

2

Typical Applications

鈥?Analog Communication Systems

鈥?900MHz Spread Spectrum Systems

鈥?400MHz Industrial Radios

鈥?Driver Stage for Higher Power Applications

鈥?3V Applications

3V PROGRAMMABLE GAIN POWER AMPLIFIER

2

POWER AMPLIFIERS

Product Description

The RF2155 is a 3V medium power programmable gain

amplifier IC. The device is manufactured on an advanced

Gallium Arsenide Heterojunction Bipolar Transistor (HBT)

process, and has been designed for use as the final RF

amplifier in analog cellular phone transmitters or ISM

applications operating at 915MHz. The device is self-con-

tained with the exception of the output matching network

and power supply feed line. A two-bit digital control pro-

vides 4 levels of power control, in 8dB steps.

0.158

0.150

0.021

0.014

-A-

0.009

0.004

0.392

0.386

0.069

0.064

0.050

0.244

0.230

8擄 MAX

0擄 MIN

0.010

0.008

0.060

0.054

0.035

0.016

Optimum Technology Matching廬 Applied

Si BJT

Si Bi-CMOS

眉

GaAs HBT

SiGe HBT

Package Style: Standard Batwing

GaAs MESFET

Si CMOS

Features

鈥?Single 3V Supply

鈥?500mW CW Output Power

鈥?31dB Small Signal Gain

鈥?Up to 60% Efficiency

鈥?Digitally Controlled Output Power

鈥?430MHz to 930MHz Frequency Range

NC

VCC1

VCC2

GND

GND

GND1

RF IN

PD

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

G16

G8

RF OUT

GND

GND

RF OUT

NC

NC

Ordering Information

RF2155

RF2155 PCBA

3V Programmable Gain Power Amplifier

Fully Assembled Evaluation Board

Functional Block Diagram

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Rev B3 010417

2-179

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