RF2155
2
Typical Applications
鈥?Analog Communication Systems
鈥?900MHz Spread Spectrum Systems
鈥?400MHz Industrial Radios
鈥?Driver Stage for Higher Power Applications
鈥?3V Applications
3V PROGRAMMABLE GAIN POWER AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2155 is a 3V medium power programmable gain
amplifier IC. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in analog cellular phone transmitters or ISM
applications operating at 915MHz. The device is self-con-
tained with the exception of the output matching network
and power supply feed line. A two-bit digital control pro-
vides 4 levels of power control, in 8dB steps.
0.158
0.150
0.021
0.014
-A-
0.009
0.004
0.392
0.386
0.069
0.064
0.050
0.244
0.230
8擄 MAX
0擄 MIN
0.010
0.008
0.060
0.054
0.035
0.016
Optimum Technology Matching廬 Applied
Si BJT
Si Bi-CMOS
眉
GaAs HBT
SiGe HBT
Package Style: Standard Batwing
GaAs MESFET
Si CMOS
Features
鈥?Single 3V Supply
鈥?500mW CW Output Power
鈥?31dB Small Signal Gain
鈥?Up to 60% Efficiency
鈥?Digitally Controlled Output Power
鈥?430MHz to 930MHz Frequency Range
NC
VCC1
VCC2
GND
GND
GND1
RF IN
PD
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
G16
G8
RF OUT
GND
GND
RF OUT
NC
NC
Ordering Information
RF2155
RF2155 PCBA
3V Programmable Gain Power Amplifier
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B3 010417
2-179