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RF2145

2

Typical Applications

鈥?4.8V DCS1800/1900 Handsets

鈥?3V DECT Handsets and Base Stations

鈥?Commercial and Consumer Systems

鈥?Portable Battery Powered Equipment

DCS1800/1900 POWER AMPLIFIER

2

POWER AMPLIFIERS

Product Description

The RF2145 is a high power, high efficiency amplifier IC.

The device is manufactured on an advanced Gallium Ars-

enide Heterojunction Bipolar Transistor (HBT) process,

and has been designed for use as the final RF amplifier in

a 4-cell DCS1800 or DCS1900 handset. The device is

packaged in a 16-lead plastic package with wide ground

leads, and is self-contained with the exception of the out-

put matching network and power supply feed line. Only a

single positive voltage is required to operate with full

power and efficiency, and on-board power control and

power-down functions are provided.

.158

.150

1

.009

.004

.069

.064

.020

.014

.392

.386

.050

.244

.230

8擄MAX

0擄MIN

.059

.054

.035

.016

.010

.008

Optimum Technology Matching廬 Applied

Si BJT

Si Bi-CMOS

眉

GaAs HBT

SiGe HBT

Package Style: SOP-16 QBW1

GaAs MESFET

Si CMOS

Features

鈥?Single 4.8V Power Supply

鈥?+32dBm Output Power

鈥?28dB Small Signal Gain

鈥?55% Power Added Efficiency

鈥?Power Control

鈥?1700MHz to 1900MHz Frequency Range

PC 1

GND 2

GND 3

VCC1 4

RF IN 5

GND 6

GND 7

NC 8

16 NC

15 GND

14 GND

13 RF OUT

12 RF OUT

11 GND

10 GND

9 NC

Ordering Information

RF2145

RF2145 PCBA

DCS1800/1900 Power Amplifier

Fully Assembled Evaluation Board

Functional Block Diagram

RF Micro Devices, Inc.

7625 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Rev B5 010329

2-141

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