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RF2131

2

Typical Applications

鈥?AMPS/ETACS Cellular Handsets

鈥?CDPD Portable Data Cards

鈥?900MHz ISM Band Equipment

鈥?Commercial and Consumer Systems

鈥?Portable Battery-Powered Equipment

HIGH EFFICIENCY AMPS/ETACS AMPLIFIER

2

POWER AMPLIFIERS

Product Description

The RF2131 is a high-power, high-efficiency amplifier IC.

The device is manufactured on an advanced Gallium Ars-

enide Heterojunction Bipolar Transistor (HBT) process,

and has been designed for use as the final RF amplifier in

AMPS and ETACS handheld equipment, spread spec-

trum systems, CDPD, and other applications in the

800MHz to 950MHz band. On-board power control pro-

vides over 30dB of control range with an analog voltage

input, and provides power down with a logic "low" for

standby operation. Although it is intended for class C

operation, linear class AB operation can be achieved by

raising the bias level. The device is self-contained with

50鈩?input and the output can be easily matched to obtain

optimum power and efficiency characteristics.

Optimum Technology Matching廬 Applied

Si BJT

Si Bi-CMOS

0.158

0.150

0.021

0.014

-A-

0.009

0.004

0.392

0.386

0.069

0.064

0.050

0.244

0.230

8擄 MAX

0擄 MIN

0.010

0.008

0.060

0.054

0.035

0.016

眉

GaAs HBT

SiGe HBT

Package Style: Standard Batwing

GaAs MESFET

Si CMOS

Features

鈥?Single 4.0V to 7.0V Supply

鈥?1.2W Output Power

鈥?25dB Gain With Analog Gain Control

鈥?64% Efficiency

鈥?Digitally Controlled Power Down Mode

鈥?800MHz to 950MHz Operation

PC 1

NC 2

VCC2 3

GND 4

GND 5

GND1 6

RF IN 7

VCC1 8

BIAS

16 NC

15 RF OUT

14 RF OUT

13 GND

12 GND

11 RF OUT

10 RF OUT

9 NC

Ordering Information

RF2131

RF2131 PCBA

High Efficiency AMPS/ETACS Amplifier

Fully Assembled Evaluation Board

Functional Block Diagram

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Rev B4 010417

2-99

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