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Preliminary


 





RF2117



 





鈥?3.6V Analog Handsets

鈥?Analog Communication Systems

鈥?400MHz Industrial Radios

鈥?Portable Battery Powered Equipment

2

POWER AMPLIFIERS

 





The RF2117 is a high power amplifier IC. The device is

manufactured on an advanced Gallium Arsenide Hetero-

junction Bipolar Transistor (HBT) process, and has been

designed for use as the final RF amplifier in analog cellu-

lar phone transmitters between 400MHz and 500MHz or

ISM applications operating at 433MHz. The device is

packaged in a low cost 16-lead plastic package with a

metal backside. The device is self-contained with the

exception of the output matching network and power sup-

ply feed line.

.244

.230

1

.393

.386

.021

.015

.050

.004

.000

EXPOSED

HEATSINK

.287

.271

.158

.152

.065

.055

.087

.071

8擄MAX

5擄MIN

.035

.016

.0098

.0075

Package Weight

typically 0.22 grams





  

Si BJT

Si Bi-CMOS

GaAs HBT

SiGe HBT

  
 !"

GaAs MESFET

Si CMOS



鈥?Single 3V to 5.5V Supply

鈥?Up to 2W CW Output Power

鈥?33dB Small Signal Gain

鈥?>50% Efficiency

鈥?400MHz to 500MHz Operation

VREG 1

VCC1 2

LTUNE 3

Q1C 4

GND 5

RFIN 6

NC 7

VPD 8

Bias

Circuits

16 NC

15 NC

14 RFOUT

13 RFOUT

12 RFOUT

11 NC

10 NC

9 NC

 



RF2117

RF2117 PCBA

High Efficiency 400MHz Amplifier

Fully Assembled Evaluation Board

  

RF Micro Devices, Inc.

7625 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Rev A0 991201

2-47

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