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RF2108



   






 





鈥?4.8V AMPS Cellular Handsets

鈥?4.8V CDMA/AMPS Cellular Handsets

鈥?Driver Amplifier in Cellular Base Stations

鈥?Portable Battery Powered Equipment

2

POWER AMPLIFIERS



The RF2108 is a high power, high efficiency linear ampli-

fier IC. The device is manufactured on an advanced Gal-

lium Arsenide Heterojunction Bipolar Transistor (HBT)

process, and has been designed for use as the final RF

amplifier in dual-mode 4-cell CDMA/AMPS hand-held

digital cellular equipment, spread spectrum systems, and

other applications in the 800MHz to 950MHz band. The

device is self-contained with 50鈩?input and the output

can be easily matched to obtain optimum power, effi-

ciency, and linearity characteristics.









1

.392

.386

.244

.230

8擄MAX

0擄MIN

.035

.016

.010

.008

.158

.150

.020

.014

.050

 





.009

.004

.069

.064



.059

.054





Si BJT

Si Bi-CMOS

GaAs HBT

SiGe HBT



Si CMOS

16

15

14

13

12

11

10

9





  







GND

RF OUT

RF OUT

GND

GND

RF OUT

RF OUT

GND





RF2108

RF2108 PCBA

GaAs MESFET



鈥?Single 4.2V to 6.0V Supply

鈥?28dBm Linear Output Power

鈥?29dB Gain With Analog Gain Control

鈥?45% Linear Efficiency

鈥?On-board Power Down Mode

鈥?800MHz to 950MHz Operation

RF IN

GND

GND

GND

GND

3

4

5

6

7

8











BIAS





NC

2



VCC

1





 



Linear Power Amplifier

Fully Assembled Evaluation Board

PC

  

RF Micro Devices, Inc.

7625 Thorndike Road

Greensboro, NC 27409, USA



  
 !" #

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Rev B3 991129

Powered by ICminer.com Electronic-Library Service CopyRight 2003

2-27

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