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RF2105L

2

Typical Applications

鈥?900 MHz ISM Band Applications

鈥?400 MHz Industrial Radios

鈥?Digital Communication Systems

鈥?Driver Stage for Higher Power Applications

鈥?Commercial and Consumer Systems

鈥?Portable Battery-Powered Equipment

HIGH POWER LINEAR UHF AMPLIFIER

2

POWER AMPLIFIERS

0.025

0.080

Product Description

The RF2105L is a high power, high efficiency linear

amplifier IC. The device is manufactured on an advanced

Gallium Arsenide Heterojunction Bipolar Transistor (HBT)

process, and has been designed for use as the final RF

amplifier in digital cellular phone transmitters or ISM

applications requiring linear amplification. It is packaged

in a 16-lead ceramic package with a backside ground.

The device is self-contained with the exception of the out-

put matching network and power supply feed line.

0.258

0.242

1

0.075

0.065

0.033

0.017

0.150

0.050

0.258

0.242

R0.008

0.208

sq.

0.192

0.050

0.022

0.018

0.080

Optimum Technology Matching廬 Applied

Si BJT

Si Bi-CMOS

眉

GaAs HBT

SiGe HBT

Package Style: QLCC-16 Alumina

GaAs MESFET

Si CMOS

Features

鈥?Single 2.7V to 6.5V Supply

鈥?Up to 1.2W CW Output Power

鈥?33dB Small Signal Gain

鈥?48% Efficiency

1

VCC3 2

VCC1 3

GND 4

PD 5

6

RF IN

16

15

14

13 RF OUT

12 GND

11 RF OUT

10 RF OUT

RF OUT

VCC2

NC

NC

BIAS

CIRCUIT

鈥?Digitally Controlled Power Down Mode

鈥?Small Package Outline (0.25" x 0.25")

Ordering Information

RF2105L

RF2105L PCBA

High Power Linear UHF Amplifier

Fully Assembled Evaluation Board

7

GND

8

NC

9

NC

Functional Block Diagram

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Rev B3 010720

2-19

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