RF2105L
2
Typical Applications
鈥?900 MHz ISM Band Applications
鈥?400 MHz Industrial Radios
鈥?Digital Communication Systems
鈥?Driver Stage for Higher Power Applications
鈥?Commercial and Consumer Systems
鈥?Portable Battery-Powered Equipment
HIGH POWER LINEAR UHF AMPLIFIER
2
POWER AMPLIFIERS
0.025
0.080
Product Description
The RF2105L is a high power, high efficiency linear
amplifier IC. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in digital cellular phone transmitters or ISM
applications requiring linear amplification. It is packaged
in a 16-lead ceramic package with a backside ground.
The device is self-contained with the exception of the out-
put matching network and power supply feed line.
0.258
0.242
1
0.075
0.065
0.033
0.017
0.150
0.050
0.258
0.242
R0.008
0.208
sq.
0.192
0.050
0.022
0.018
0.080
Optimum Technology Matching廬 Applied
Si BJT
Si Bi-CMOS
眉
GaAs HBT
SiGe HBT
Package Style: QLCC-16 Alumina
GaAs MESFET
Si CMOS
Features
鈥?Single 2.7V to 6.5V Supply
鈥?Up to 1.2W CW Output Power
鈥?33dB Small Signal Gain
鈥?48% Efficiency
1
VCC3 2
VCC1 3
GND 4
PD 5
6
RF IN
16
15
14
13 RF OUT
12 GND
11 RF OUT
10 RF OUT
RF OUT
VCC2
NC
NC
BIAS
CIRCUIT
鈥?Digitally Controlled Power Down Mode
鈥?Small Package Outline (0.25" x 0.25")
Ordering Information
RF2105L
RF2105L PCBA
High Power Linear UHF Amplifier
Fully Assembled Evaluation Board
7
GND
8
NC
9
NC
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B3 010720
2-19