RF1S9640SM Datasheet

IC型號(hào)：
RF1S9640SM
PDF描述：
11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs
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PDF頁(yè)數(shù)：
7頁(yè)
芯片廠家：
INTERSIL

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IRF9640, RF1S9640SM

Data Sheet

July 1999

File Number

2284.2

11A, 200V, 0.500 Ohm, P-Channel Power

MOSFETs

These are P-Channel enhancement mode silicon-gate

power 鏗乪ld-effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speci鏗乪d level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

converters, motor drivers, relay drivers and as drivers for

other high-power switching devices. The high input

impedance allows these types to be operated directly from

integrated circuits.

Formerly developmental type TA17522.

Features

鈥?11A, 200V

鈥?r

DS(ON)

= 0.500鈩?/div>

鈥?Single Pulse Avalanche Energy Rated

鈥?SOA is Power Dissipation Limited

鈥?Nanosecond Switching Speeds

鈥?Linear Transfer Characteristics

鈥?High Input Impedance

鈥?Related Literature

- TB334, 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Ordering Information

PART NUMBER

IRF9640

RF1S9640SM

PACKAGE

TO-220AB

TO-263AB

BRAND

IRF9640

RF1S9640

Symbol

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-263AB variant in the tape and reel, i.e., RF1S9640SM9A.

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

GATE

SOURCE

JEDEC TO-263AB

DRAIN

(FLANGE)

4-33

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999

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