IRF630, RF1S630SM
Data Sheet
June 1999
File Number
1578.2
9A, 200V, 0.400 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power 鏗乪ld effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
speci鏗乪d level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17412.
Features
鈥?9A, 200V
鈥?r
DS(ON)
= 0.400鈩?/div>
鈥?Single Pulse Avalanche Energy Rated
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
IRF630
RF1S630SM
PACKAGE
TO-220AB
TO-263AB
BRAND
IRF630
RF1S630
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S630SM9A.
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
GATE
SOURCE
JEDEC TO-263AB
DRAIN
(FLANGE)
4-202
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
漏
Intersil Corporation 1999
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