鈥?/div>
Temperature Compensating
PSPICE Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?+175
o
C Operating Temperature
DRAIN
(BOTTOM
SIDE METAL)
Description
The
RFG60P03,
RFP60P03,
RF1S60P03
and
RF1S60P03SM P-Channel power MOSFETs are manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
RFG60P03
RFP60P03
RF1S60P03
RF1S60P03SM
PACKAGE
TO-247
TO-220AB
TO-262AA
TO-263AB
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
BRAND
RFG60P03
RFP60P03
F1S60P03
F1S60P03
DRAIN
(FLANGE)
A
JEDEC TO-262AA
SOURCE
DRAIN
GATE
NOTE: When ordering use the entire part number.
Formerly developmental type TA49045.
Symbol
D
JEDEC TO-263AB
M
A
A
G
GATE
SOURCE
S
DRAIN
(FLANGE)
Absolute Maximum Ratings
T
C
= +25
o
C
RFG60P03, RFP60P03,
RF1S60P03, RFS60P03SM
-30
-30
鹵20
60
Refer to Peak Current Curve
Refer to UIS Curve
176
1.17
-55 to +175
UNITS
V
V
V
A
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
W
W/
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright
漏
Harris Corporation 1995
File Number
3951.1
4-51
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