Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
RF1S530SM
PACKAGE
TO-263AB
BRAND
RF1S530
Symbol
D
NOTE: When ordering, use the entire part number. Add the suf鏗亁 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
RF1S530SM9A.
G
S
Packaging
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Speci鏗乪d
RF1S530SM
100
100
14
10
56
鹵
20
79
0.53
69
-55 to 175
300
260
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
o
C
o
C
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
鈩?
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci鏗乧ation is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
漏2001 Fairchild Semiconductor Corporation
RF1S530SM Rev. A
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