RF1S4N100SM Datasheet

IC型號(hào)：
RF1S4N100SM
PDF描述：
4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFET...
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INTERSIL

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RFP4N100, RF1S4N100SM

Data Sheet

August 1999

File Number

2457.4

4.3A, 1000V, 3.500 Ohm, High Voltage,

N-Channel Power MOSFETs

The RFP4N100 and RFP4N100SM are N-Channel

enhancement mode silicon gate power field effect

transistors. They are designed for use in applications such

as switching regulators, switching converters, motor

drivers, relay drivers, and drivers for high power bipolar

switching transistors requiring high speed and low gate

drive power. This type can be operated directly from an

integrated circuit.

Formerly developmental type TA09850.

Features

鈥?4.3A, 1000V

鈥?r

DS(ON)

= 3.500鈩?/div>

鈥?UIS Rating Curve (Single Pulse)

鈥?-55

C to 150

C Operating Temperature

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Symbol

Ordering Information

PART NUMBER

RFP4N100

RF1S4N100SM

PACKAGE

TO-220AB

TO-263AB

BRAND

RFP4N100

F1S4N100

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

GATE

SOURCE

JEDEC TO-263AB

DRAIN

(FLANGE)

4-528

CAUTION: These devices are sensitive to electrostatic discharge; follow properS ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999

制造商
Fairchild Semiconductor
晶體管極性
N-Channel
汲極/源極擊穿電壓
1000 V
閘/源擊穿電壓
+/- 20 V
漏極連續(xù)電流
4.3 A
電阻汲極/源極 RDS（導(dǎo)通）
3.5 Ohms
配置
Single
最大工作溫度
+ 150 C
安裝風(fēng)格
SMD/SMT
封裝 / 箱體
TO-263AB
下降時(shí)間
50 ns
最小工作溫度
- 55 C
功率耗散
150 W
上升時(shí)間
50 ns
典型關(guān)閉延遲時(shí)間
170 ns

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RF1S4N100SM Datasheet

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