鈥?/div>
Temperature Compensating
PSPICE Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?+175
o
C Operating Temperature
Description
The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
N-Channel power MOSFETs are manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switch-
ing regulators, switching converters, motor drivers, relay
drivers and emitter switches for bipolar transistors. These
transistors can be operated directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
RFG45N06
RFP45N06
RF1S45N06
RF1S45N06SM
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
PACKAGE
TO-247
TO-220AB
TO-262AA
TO-263AB
BRAND
RFG45N06
RFP45N06
F1S45N06
F1S45N06
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
NOTE: When ordering, use the entire part number. Add the suf鏗亁, 9A,
to obtain the TO-263AB variant in tape and reel, i.e.
RF1S45N06SM9A.
Formerly developmental type TA49028.
JEDEC TO-263AB
M
A
Symbol
G
D
A
A
DRAIN
(FLANGE)
GATE
SOURCE
S
Absolute Maximum Ratings
T
C
= +25
o
C
RFG45N06, RFP45N06
RF1S45N06, RF1S45N06SM
60
60
鹵20
45
Refer to Peak Current Curve
Refer to UIS Curve
125
131
0.877
-55 to +175
UNITS
V
V
V
A
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Maximum Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
AM
Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
A
W
W/
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright
漏
Harris Corporation 1995
File Number
3574.2
3-33
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