S E M I C O N D U C T O R
RF1K49088
Description
The RF1K49088 Dual N-Channel power MOSFET is
manufactured using an advanced MegaFET process. This
process, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It is designed for use
in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. This product achieves full rated conduction at a
gate bias in the 3V - 5V range, thereby facilitating true on-off
power control directly from logic level (5V) integrated circuits.
Formerly developmental type TA49088.
BRAND
RF1K49088
January 1997
3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel
LittleFET鈩?Enhancement Mode Power MOSFET
Features
鈥?3.5A, 30V
鈥?r
DS(ON)
= 0.060鈩?/div>
鈥?/div>
Temperature Compensating
PSPICE Model
鈥?On-Resistance vs Gate Drive Voltage Curves
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
Ordering Information
PART NUMBER
RF1K49088
PACKAGE
MS-012AA
Symbol
D1(8)
D1(7)
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suf鏗亁 96 to the part number, i.e. RF1K4908896.
S1(1)
G1(2)
D2(6)
D2(5)
S2(3)
G2(4)
Packaging
JEDEC MS-012AA
BRANDING DASH
5
1
2
3
4
LittleFET鈩?is a trademerk of Harris Corporation
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
漏
Harris Corporation 1997
File Number
3952.4
5-58
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