Gate Protection Diode.
鈭?/div>
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain Current
Reverse Drain
Current
Source Current
(Body Diode)
Pulsed
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
鈭?/div>
I
DR
I
DRP
鈭?/div>
I
s
I
sp
鈭?/div>
P
D
Tch
Tstg
Limits
30
鹵20
10
40
10
40
1.3
5.2
2
150
鈭?5~+150
Unit
V
V
A
A
A
A
A
A
W
Total Power Dissipation (TC=25
擄C
)
Channel Temperature
Storage Temperature
鈭桺W鈮?0碌s,
Duty cycle鈮?%
擄C
擄C
+
0.2
鈭?/div>
0.1
Structure
Silicon N-channel
MOS FET
+
3.9
鈭?/div>
0.15
+
6.0
鈭?/div>
0.3
+
0.5
鈭?/div>
0.1
(1)
0.15
+
1.5
鈭?/div>
0.1
Each lead has same dimensions
1.27
+
0.4
next
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