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REJ03C0098_R1LV0408C Datasheet

  • REJ03C0098_R1LV0408C

  • Wide Temperature Range Version 4M SRAM (512-kword 】 8-bit)

  • 14頁(yè)

  • HITACHI

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R1LV0408C-I Series
Wide Temperature Range Version
4M SRAM (512-kword
脳
8-bit)
REJ03C0098-0200Z
Rev. 2.00
May.25.2004
Description
The R1LV0408C-I is a 4-Mbit static RAM organized 512-kword
脳
8-bit. R1LV0408C-I Series has
realized higher density, higher performance and low power consumption by employing CMOS process
technology (6-transistor memory cell). The R1LV0408C-I Series offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin
TSOP II and 32-pin STSOP.
Features
鈥?/div>
Single 3 V supply: 2.7 V to 3.6 V
鈥?/div>
Access time: 55/70 ns (max)
鈥?/div>
Power dissipation:
錚?/div>
Active: 6 mW/MHz (typ)
錚?/div>
Standby: 1.5
碌W
(typ)
鈥?/div>
Completely static memory.
錚?/div>
No clock or timing strobe required
鈥?/div>
Equal access and cycle times
鈥?/div>
Common data input and output.
錚?/div>
Three state output
鈥?/div>
Directly TTL compatible.
錚?/div>
All inputs and outputs
鈥?/div>
Battery backup operation.
鈥?/div>
Operating temperature:
鈭?0
to +85擄C
Rev.2.00, May.25.2004, page 1 of 12

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