RDX080N50
Transistors
10V Drive Nch MOS FET
RDX080N50
Structure
Silicon N-channel MOS FET
External dimensions
(Unit : mm)
TO-220FM
10.0
蠁
3.2
4.5
2.8
14.0
Features
1) Low on-resistance.
2) Low input capacitance.
3) Excellent resistance to damage from static electricity.
(1)Gate
15.0
12.0
8.0
2.5
1.3
1.2
0.8
2.54
(1) (2) (3)
2.54
0.75
2.6
Applications
Switching
(2)Drain
(3)Source
Packaging specifications
Package
Type
RDX080N50
Code
Basic ordering unit (pieces)
Bulk
鈭?/div>
500
Inner circuit
*1
*2
(1)
(2)
(3)
鈭?
GATE PROTECTION DIODE
*2 BODY DIODE
(1) Gate
(2) Drain
(3) Source
Absolute maximum ratings
(Ta=25擄C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
鈭?
I
DP
鈭?
I
S
I
SP
鈭?
I
AS
鈭?
E
AS
鈭?
P
D
Tch
Tstg
Limits
500
鹵30
鹵8
鹵32
8
32
8
85
40
150
鈭?5
to
+150
Unit
V
V
A
A
A
A
A
mJ
W
擄C
擄C
Avalanche current
Avalanche energy
Total power dissipation (Tc=25擄C)
Channel temperature
Range of storage temperature
鈭?
Limited only by maximum temperature allowed
鈭?
Pw 10碌s, Duty cycle 1%
鈭?
L
=
2.3mH V
DD
=90V Rg=25鈩?starting Tch=25擄C
鈭?
L
=
2.3mH V
DD
=90V Rg=25鈩?/div>
Thermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
Unit
擄C/W
3.125
1/2
1
2
3
