MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD60HUF1
25.0+/-0.3
7.0+/-0.5
11.0+/-0.3
Silicon MOSFET Power Transistor 520MHz,60W
DESCRIPTION
RD60HUF1 is a MOS FET type transistor specifically
designed for UHF High power amplifiers applications.
OUTLINE DRAWING
1
24.0+/-0.6
4-C2
鈥igh power and High Gain:
Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz
鈥igh Efficiency: 55%typ.on UHF Band
2
3
10.0+/-0.3
FEATURES
R1.6+/-0.15
0.1
-0.01
+0.05
APPLICATION
For output stage of high power amplifiers in UHF
Band mobile radio sets.
5.0+/-0.3
4.5+/-0.7
6.2+/-0.7
18.0+/-0.3
3.3+/-0.2
PIN
1.Drain
2.Source
3.Gate
UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25
擄C
UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Tj
Tstg
Rth-c
PARAMETER
Drain tosource voltage
Gateto source voltage
Channel dissipation
Junction Temperature
Storage temperature
Thermal resistance
CONDITIONS
RATINGS
30
+/-20
150
175
-40 to +175
1.0
UNIT
V
V
W
擄C
擄C
擄C/W
Tc=25
擄C
Junction to case
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25
擄C
, UNLESS OTHERWISE NOTED)
SYMBOL
I
DSS
I
GSS
V
TH
Pout
畏D
PARAMETER
Zerogate voltage drain current
Gate to source leak current
Gate threshold voltage
Output power
Drain efficiency
Load VSWR tolerance
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=520MHz ,V
DD
=12.5V
Pin=10W, Idq=2.5A
V
DD
=15.2V,Po=60W(PinControl)
Idq=2.5A,Zg=50
鈩?/div>
Load VSWR=20:1(All Phase)
LIMITS
MIN
TYP MAX.
-
-
400
-
-
1
1.1
1.45
1.8
60
65
-
50
55
-
No destroy
UNIT
uA
uA
V
W
%
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD60HUF1
MITSUBISHI ELECTRIC
1/7
REV.1 14 May. 2003
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