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RD45HMF1 Datasheet

  • RD45HMF1

  • Silicon MOSFET Power Transistor 900MHz,45W

  • 322.40KB

  • 7頁

  • MITSUBISHI   MITSUBISHI

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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD45HMF1
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
Silicon MOSFET Power Transistor 900MHz,45W
DESCRIPTION
RD45HMF1 is a MOS FET type transistor specifically
designed for 900MHz-band High power amplifiers
applications.
OUTLINE DRAWING
4-C2
24.0+/-0.6
鈥igh power and High Gain:
Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz
鈥igh Efficiency: 50%typ.
2
10.0+/-0.3
FEATURES
9.6+/-0.3
0.1
-0.01
3
+0.05
R1.6+/-0.15
4.5+/-0.7
6.2+/-0.7
APPLICATION
For output stage of high power amplifiers in
800-900MHz Band mobile radio sets.
5.0+/-0.3
18.5+/-0.3
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25
擄C
UNLESS OTHERWISE NOTED)
SYMBOL
V
DSS
V
GSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel temperature
Storage temperature
Thermal resistance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25
擄C
Zg=Zl=50
鈩?/div>
-
-
-
junction to case
RATINGS
30
+/-20
125
25
15
175
-40 to +175
1.2
UNIT
V
V
W
W
A
擄C
擄C
擄C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25
擄C
UNLESS OTHERWISE NOTED)
SYMBOL
I
DSS
I
GSS
V
TH
Pout
畏D
PARAMETER
Zerogate voltage drain current
Gate to source leak current
Gate threshold voltage
Output power
Drain efficiency
Load VSWR tolerance
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=900MHz ,V
DD
=12.5V
Pin=15W,Idq=2.0A
V
DD
=15.2V,Po=45W(PinControl)
Idq=2.0A,Zg=50
鈩?/div>
Load VSWR=20:1(All Phase)
LIMITS
MIN
TYP MAX.
-
-
10
-
-
1
1.0
-
3.0
45
50
-
45
50
-
No destroy
UNIT
uA
uA
V
W
%
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD45HMF1
3.3+/-0.2
MITSUBISHI ELECTRIC
1/7
REV.2 7 Apr. 2003

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