MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HUF1
DRAWING
22.0+/-0.3
18.0+/-0.3
7.6+/-0.3
4-C1
Silicon MOSFET Power Transistor,520MHz,30W
DESCRIPTION
RD30HUF1 is a MOS FET type transistor specifically
designed for UHF RF power amplifiers applications.
7.2+/-0.5
OUTLINE
鈥igh power gain:
Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz
鈥igh Efficiency: 55%typ.
2
3
R1.6
14.0+/-0.4
6.6+/-0.3
FEATURES
1
3.0+/-0.4
5.1+/-0.5
For output stage of high power amplifiers in UHF
band mobile radio sets.
2.3+/-0.3
APPLICATION
2.8+/-0.3
0.10
PIN
1.Drain
2.Source
3.Gate
UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25
擄C
UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
Tj
Tstg
Rth-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Junction temperature
Storage temperature
Thermal resistance
RATINGS UNIT
30
V
+/-20
V
Tc=25
擄C
75
W
Zg=Zl=50
鈩?/div>
7.5
W
擄C
175
-40 to +175
擄C
擄C/W
Junction to case
2.0
CONDITIONS
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25
擄C
, UNLESS OTHERWISE NOTED)
SYMBOL
I
DSS
I
GSS
V
TH
Pout
畏D1
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold voltage
Output power
Drain efficiency
Load VSWR tolerance
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=520MHz,V
DD
=12.5V
Pin=3.0W,Idq=1.0A
V
DD
=15.2V,Po=30W(PinControl)
Idq=1.0A,Zg=50
鈩?/div>
Load VSWR=20:1(All Phase)
MIN
-
-
1.3
30
50
LIMITS
TYP
MAX.
-
200
-
1
1.8
2.3
35
-
55
-
No destroy
UNIT
uA
uA
V
W
%
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD30HUF1
MITSUBISHI ELECTRIC
1/7
REV.1 14 MAY. 2003
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