MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
(a)
0.2+/-0.05
0.65+/-0.2
(c)
(b)
7.0+/-0.2
(b)
8.0+/-0.2
6.2+/-0.2
4.2+/-0.2
5.6+/-0.2
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
DESCRIPTION
RD05MMP1 is a MOS FET type transistor
specifically designed for UHF RF power
amplifiers applications.
(3.6)
OUTLINE DRAWING
(d)
FEATURES
鈥igh power gain:
Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz
鈥igh Efficiency: 43%min. (941MHz)
鈥o gate protection diode
INDEX MARK
[Gate]
(4.5)
0.95+/-0.2
2.6+/-0.2
TOP VIEW
DETAIL A
SIDE VIEW
1.8+/-0.1
BOTTOM VIEW
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
APPLICATION
For output stage of high power amplifiers in
941MHz band mobile radio sets.
SIDE VIEW
Standoff = max 0.05
0.7+/-0.1
UNIT:mm
DETAIL A
NOTES:
1. ( ) Typical value
RoHS COMPLIANT
RD05MMP1 is a RoHS compliant product.
RoHS compliance is indicating by the letter 鈥淕鈥?after the Lot Marking. This product includes the lead in high
melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25
擄C
UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Junction Temperature
Storage temperature
Thermal resistance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25
擄C
Zg=Zl=50
鈩?/div>
-
-
-
Junction to case
RATINGS
40
-5 to +10
73
1.4
3
150
-40 to +125
1.7
UNIT
V
V
W
W
A
擄C
擄C
擄C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL
I
DSS
I
GSS
V
TH
Pout
畏D
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
(Tc=25
擄C
, UNLESS OTHERWISE NOTED)
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=941MHz , V
DD
=7.2V
Pin=0.7W,Idq=1.0A
V
DD
=9.5V,Po=5.5W(Pin Control)
f=941MHz,Idq=1.0A,Zg=50
鈩?/div>
Load VSWR=20:1(All Phase)
MIN
-
-
0.5
5.5
43
LIMITS
TYP MAX.
-
10
-
1
-
2.5
6
-
-
-
No destroy
UNIT
uA
uA
V
W
%
-
VSWRT Load VSWR tolerance
Note : Above parameters , ratings , limits and conditions are subject to change.
RD05MMP1
MITSUBISHI ELECTRIC
1/7
1st Jun. 2006
MITSUBISHI
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